Dimitris E. Ioannou received his BS in Physics (1974), from
Prof. Ioannou’s main research contributions on rough chronological order include: development of SEM-EBIC techniques for characterizing electrically active defects and measuring the diffusion length in semiconductor materials; techniques for studying deep traps, carrier lifetime and interface states in Silicon on Insulator (SOI); physics and hot carrier reliability of SOI devices, including the discovery of the opposite-channel based carrier-injection and invented a SOI flash memory cell that exploits this phenomenon; development of Schottky and Ohmic contact technology for SiC. His current research interests are on the performance and reliability issues of SOI and bulk CMOS devices and circuits (radiation hardness, hot carriers, negative bias temperature instability, electrostatic discharge protection), and on non-classical (nano-scale) CMOS and the emerging field of nanoelectronics, including nanowire based non-volatile memory. He has authored or coauthored over two hundred and fifty research papers and conference presentations, and advised more than thirty research students.
Prof. Ioannou has been involved with the IEEE Intern. SOI Conference for over fifteen years, including as technical program chairman (SOI’2001) and general chairman (SOI’2002). He is the 2008 Outstanding Research Faculty Award Recipient of the George Mason University Volgenau School of Information Technology and Engineering. He is a Fellow of the IEEE, and in recognition of the importance of his research to semiconductor industry, he has received the IBM faculty award twice.