**GEORGE
MASON UNIVERSITY**

**ELECTRICAL
AND COMPUTER ENGINEERING DEPARTMENT**

**Spring
2014 ECE 685:
Nanoelectronics**

Time
and location: Tuesday 4:30 pm - 7:10 pm, Robinson Hall
A123

Instructor:
Qiliang Li, Engineering Bldg, Room 3250, Tel 703-993-1596, Email: qli6@gmu.edu

Office Hours: Friday 1:20 pm - 3:20 pm; other times by appointment.

**Course
DESCRIPTION**

This course focuses on the
fundamental concepts and principles of nanoelectronic materials and devices.
Nanoelectronics is
concerned with electronic devices with one or more dimensions at
nanoscale. The lecture will cover the electronic properties of solids including
semiconductors in samples of physical dimension of ~100 nm or less, and the
corresponding basic device building blocks such as quantum dot (QD), single
electron transistor (SET), nanowire, carbon nanotube (CNT), graphene, etc. The
course will consider the design and analysis of a variety of nanoscale devices
("quantum" or "mesoscopic" devices) and examine the most notable, novel
applications.

**Prerequisites:**
ECE
584 -*Semiconductor Device
Fundamentals,* or equivalent courses

**Required
Textbook****:**
"Fundamentals of
Nanoelectronics"
by George W. Hanson,
Pearson/Prentice Hall (2008),
ISBN
978-0131957084.

**RECOMMENDED
READINGS:**

1.
"Mesoscopic Electronics in Solid State
Nanostructures"
by Thomas Heinzel.

2.
"Nanoelectronics and Information
Technology" 2^{nd} Ed.
by Rainer Waser
(Ed.)

3. "Semiconductor
Physical Electronics" by S. Li, Springer, ISBN
978-0387288932

**COURSE
OUTLINE**

1.
Course
and Syllabus Overview

2.
Classical
particles, classical waves, and quantum particles

3.
Quantum
Mechanics of Electrons

4.
Confined
Electrons / Electrons Subject to a Periodic Potential

5.
Tunnel
Junctions and Applications of Tunneling

6.
Coulomb
Blockade and the Single-Electron Transistor

7.
Carbon
Nanotubes and Nanowire Transistors

8.
Many
Electron Phenomena-Particle Statistics

9.
Models
of Quantum Wells, Quantum Wires and Quantum Dots

10. Nanowires,
Ballistic Transport, and Spin Transport

11. NanoCMOS /
Silicon-on-Insulator (SOI) CMOS

12. Fundamental Limits to
Scaling

**GRADING**

Homework
+ project-1 + project-2
20% + 15% + 15%

Midterm
Exam 25%

Final
Exam
25%

(Exam will be announced in class at least two weeks before the exam.)

1. Chapter I Introduction to Nanoelectronics Lecture Slides

2. Particles, waves and quantum particles, Lecture Note

3. Chapter 3 Quantum Mechanics

Homework #1

Chapter 3: Problem (page 81 -84)

1, 2, 3, 4, 8, 9, 15, 16

4. Chapter 4 - Free and Confined Electrons

Homework #2: 4.4, 4.8, 4.11 and 4.17, due on Feb 25.

5. Chapter 5 - Band Theory of Solids

Homework #3: page 177, Problem 2, 6, 17, 21, it is due on March 4

Mid-Term Exam will be held in March 18 (Tuesday).

2011 Midterm exam questions and solution

2013 Midterm exam questions and solution

Project #1: Two-Dimensional Materials, is due on March 25

6. Chapter 6 - Tunnel Junctions and Applications of Tunneling

6.3 and 6.4 lecture and figures

Homework #4: 6.4, 6.6 and 6.12, it is due on April 15

Homework solution: Chapter 6 homework solution

7. Chapter 7 - Coulomb Blockade and The Single-Electron Transistor

7.1 - Lecture note on Coulomb Blockade

7.2 - Lecture note on Single electron transistor

Chapter 10 Nanowires, Ballistic Transport and Spin Transport

reference readings:

b. ballistic transport MOSFET review

c. chaotic effect on ballistic transport

##