GEORGE MASON UNIVERSITY

ELECTRICAL AND COMPUTER ENGINEERING DEPARTMENT

 

Spring 2014        ECE 685:  Nanoelectronics

 

Time and location:  Tuesday 4:30 pm - 7:10 pm, Robinson Hall A123

Instructor:  Qiliang Li, Engineering Bldg, Room 3250, Tel 703-993-1596, Email:  qli6@gmu.edu

Office Hours:  Friday 1:20 pm - 3:20 pm; other times by appointment. 

 

course syllabus

 

Course DESCRIPTION

 

This course focuses on the fundamental concepts and principles of nanoelectronic materials and devices. Nanoelectronics is concerned with electronic devices with one or more dimensions at nanoscale. The lecture will cover the electronic properties of solids including semiconductors in samples of physical dimension of ~100 nm or less, and the corresponding basic device building blocks such as quantum dot (QD), single electron transistor (SET), nanowire, carbon nanotube (CNT), graphene, etc. The course will consider the design and analysis of a variety of nanoscale devices ("quantum" or "mesoscopic" devices) and examine the most notable, novel applications.

Prerequisites: ECE 584 -Semiconductor Device Fundamentals, or equivalent courses

 

Required Textbook: "Fundamentals of Nanoelectronics" by George W. Hanson, Pearson/Prentice Hall (2008), ISBN 978-0131957084. 

 

RECOMMENDED READINGS:

 

1.      "Mesoscopic Electronics in Solid State Nanostructures" by Thomas Heinzel.

2.      "Nanoelectronics and Information Technology" 2nd Ed. by Rainer Waser (Ed.)

3.      "Semiconductor Physical Electronics" by S. Li, Springer, ISBN 978-0387288932

 

COURSE OUTLINE

1.      Course and Syllabus Overview

2.      Classical particles, classical waves, and quantum particles

3.      Quantum Mechanics of Electrons

4.      Confined Electrons / Electrons Subject to a Periodic Potential

5.      Tunnel Junctions and Applications of Tunneling

6.      Coulomb Blockade and the Single-Electron Transistor

7.      Carbon Nanotubes and Nanowire Transistors

8.      Many Electron Phenomena-Particle Statistics

9.      Models of Quantum Wells, Quantum Wires and Quantum Dots

10.   Nanowires, Ballistic Transport, and Spin Transport

11.   NanoCMOS / Silicon-on-Insulator (SOI) CMOS

12.   Fundamental Limits to Scaling

 

 

GRADING

Homework + project-1 + project-2                            20% + 15% + 15%

Midterm Exam                                                             25%

Final Exam                                                                   25% 

 

(Exam will be announced in class at least two weeks before the exam.)

 

1. Chapter I Introduction to Nanoelectronics Lecture Slides

 

2. Particles, waves and quantum particles, Lecture Note

 

3. Chapter 3 Quantum Mechanics

 

Homework #1

Chapter 3: Problem (page 81 -84)

1, 2, 3, 4, 8, 9, 15, 16

The homework is due on Feb. 18.

 

Chapter 3 solution

 

4. Chapter 4 - Free and Confined Electrons

 

Lecture 1 slides pdf     ppt file

 

Lecture 2 slides

 

Homework #2: 4.4, 4.8, 4.11 and  4.17, due on Feb 25.

 

Chapter 4 solution

 

5. Chapter 5 - Band Theory of Solids

 

Lecture 1 slides

 

Lecture 2 slides

 

Homework #3: page 177, Problem 2, 6, 17, 21, it is due on March 4

 

Chapter 5 solution

 

Mid-Term Exam will be held in March 18 (Tuesday).

 

2011 Midterm exam questions and solution

 

2013 Midterm exam questions and solution

 

Example Question list

 

 

Project #1: Two-Dimensional Materials, is due on March 25

 

 

6. Chapter 6 - Tunnel Junctions and Applications of Tunneling

 

6.1 and 6.2 lecture

 

6.3 and 6.4 lecture and figures

 

Project #2: Electronics (devices) based on 2D materials

 

Homework #4: 6.4, 6.6 and 6.12, it is due on April 15

 

Homework solution: Chapter 6 homework solution

 

7. Chapter 7 - Coulomb Blockade and The Single-Electron Transistor

 

7.1 - Lecture note on Coulomb Blockade

 

7.2 - Lecture note on Single electron transistor

 

manuscript reading: InP nanowire SET

 

Chapter 7 solution

 

Chapter 10 Nanowires, Ballistic Transport and Spin Transport

 

reference readings:

a. Kondo effect in SET

b. ballistic transport MOSFET review

c. chaotic effect on ballistic transport

d. Spintronics (complete review)

e. spin rotation based SFET non-ballistic

 

Chapter 10 solution

 

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