Rao V. Mulpuri
Ph.D. Theses Completed
- Name of the student: Sadanand M. Gulwadi
Title of the Thesis: Transition metal Implants in In0.53Ga0.47As.
Completion date: September 1992.
- Name of the student: Ravi K. Nadella
Title of the Thesis: High energy implants in InP.
Completion date: June 1993.
- Name of the student: Jayadev Vellanki
Title of the Thesis: High energy ion implantation for microwave device applications.
Completion date: December 1995.
- Name of the Student: Andrew Edwards
Title of the Thesis: Processing Development and Characterization of GaN Field Effect Transistors.
Completion Date: June 1998.
- Name of the Student: Jason Gardner
Title of the Thesis: Ion implantation doping of SiC.
Completion Date: June 1998.
- Name of the student: Jesse Tucker
Title of the Thesis: Fabrication and characterization of fully implanted SiC n-p junction diode and Metal-Semiconductor Field-Effect-Transistors (MESFET).
Completion Date: May 2001
- Name of the student: Souvick Mitra
Tile of the Thesis: Effect of ion-implantation generated defects on the characteristics of SiC devices.
Completion Date: December 2003.
- Name of the student: Siddarth Sundaresan
Title of the Thesis: Ultra-fast, high temperature microwave processing of silicon carbide and gallium nitride
Completion Date: September 2007.
- Name of Student: Jayna Shah
Title of Thesis: Microfluidic devices for forensic DNA analysis
Completion Date: October 2007.
- Name of Student: Taizo Okayama
Title of Thesis: Performance of devices made of large bandgap semiconductors, SiC and GaN
Completion Date: November 2007.
- Name of Student: Madhu Gowda
Title of Thesis: Optical characterization of widebandgap bulk crystals and epitaxial layers
Completion date: October 2008.
- Name of Student: N. Mahadik (full-time Ph. D. student supported as a GRA)
Title of Thesis: Non-destructive x-ray characterization of semiconductor materials and devices.
Completion date: December 2008.
All the above were full-time students supported as GRAs
Ph. D. Theses in Progress:
- Name of Student: Stuart Farrel (full-time Ph.D. student supported as a GRA)
Title of Thesis: Fabrication and characterization of CdHgTe focal plane arrays on Si substrates.
- Name of Student: Geetha Sai Aluri (full-time Ph.D. student supported as a GRA)
Title of Thesis: Effect of microwave annealing on in-situ and ion-implantation doped III-nitrides.
M.S. Theses Completed:
- "An electrical characterization of Si and Be implanted InP:Fe activated by halogen lamp rapid thermal annealing," by Micheal P.
- "Fe implantation in In0.53Ga0.47As," by Navid R. Keshavarz Nia, 1988.
- "Implantations in GaAs grown on Si," by R. S. Babu, 1989.
- "Be/P, Be/Ar, and Be/N co implantations into InP," by Ravi K. Nadella, 1989.
- "Ion implantations in InSb grown on GaAs," by Richard E. Echard, 1990.
- "Elevated temperature N implantation into 6H-SiC", by Jason Gardner, 1995.
- "Nitrogen and aluminum implantation in vanadium doped high resistivity 6H-silicon carbide", by D. N. Dwight, 1997.
- "As and Sb implantations in SiC", by Jesse Tucker, 1998.
- "Pumped optical fiber amplifier", by Wallace Johnson, 1998.
- "Ion-implantation doping of GaSb", by Thang Do, 1999.
- "AlN encapsulant for annealing ion-implanted SiC", by Evan Handy, 2000.
- "Microwave dielectric heating of micro-fluids", by Siddarth Sundaresan, 2004.
- "Immobilization of biological matter using transparent metal electrodes and silicon
microarrays", by Bharat Sankaran, 2007.
Ten of the above students were supported by the research funding
Training a Graduate Student of a Foreign University:
Jaime M. Martin, a Ph.D. student of Universidad Complutense, Madrid, Spain visited our laboratory during September `92 to December `92 to get training in `ion implantation and characterization of ion implanted semiconductor materials'. His trip and living expenses were paid by the Government of Spain.